pnp epitaxial ty transistor 1. base 2. emitter 3. collector sot-323 absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage -60 v v ces collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 325 mw t stg storage temperature 150 c symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -60 v bv ceo * collector-emitter breakdown voltage i c = -10ma, i b =0 -60 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -50v, i e =0 -0.01 a h fe dc current gain v ce = -10v, i e = -0.1ma v ce = -10v, i c = -1.0ma v ce = -10v, i c = -10ma *v ce = -10v, ic= -150ma *v ce = -10v, i c = -500ma 75 100 100 100 50 300 v ce (sat) * collector-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -0.4 -1.6 v v v be (sat) * base-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -1.3 -2.6 v v f t current gain bandwidth product i c = -50ma, v ce = -20v, f=100mhz 200 mhz c ob output capacitance v cb = -10v, i e =0 f=1.0mhz 8pf t on turn on time v cc = -30v, i c = -150ma i b1 = -15ma 45 ns t off turn off time v cc = -6v, i c = -150ma i b1 =i b2 =15ma 100 ns FJX2907A general purpose transistor s2f marking product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 2 3
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